1/8 february 2004 stv160nf02l n-channel 20v - 0.0016 ? - 160a powerso-10 stripfet? ii power mosfet (1) starting t j =25c , i d =80a,v dd =20v (**)limited only maximum junction temperature allowed by powerso-10 typical r ds (on) = 0.0016 ? low threshold drive ultra low on-resistance ultra fast switching 100% avalanche tested very low gate charge low profile, very low parasitic inductance powerso-10 package description the stv160nf02l represents the second gener- ation of application specific stmicroelectronics well established stripfet? process based on a very unique strip layout design. the resulting mosfet shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. process simplification also trans- lates into improved manufacturing reproducibility. this device is particularly suitable for high current, low voltage switching application where efficiency is crucial applications buck converters in high performance telecom and vrms dc- dc converters absolute maximum ratings ( ) pulse width limited by safe operating area type v dss r ds(on) i d stv160nf02l 20 v < 0.0025 ? 160 a symbol parameter value unit v ds drain-source voltage (v gs =0) 20 v v dgr drain-gate voltage (r gs =20k ? ) 20 v v gs gate- source voltage 15 v i d (**) drain current (continuos) at t c =25c 160 a i d drain current (continuos) at t c = 100c 11 3 a i dm ( ) drain current (pulsed) 640 a p tot total dissipation at t c = 25c 210 w derating factor 1.4 w/c e as (1) single pulse avalanche energy 1.5 j t stg storage temperature ?65 to 175 c t j max. operating junction temperature 175 c powerso-10 1 10 internal schematic diagram connection diagram (top view) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
stv160nf02l 2/8 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.71 c/w rthj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 20 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating 1a v ds =maxrating,t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs =15v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 1v r ds(on) static drain-source on resistance v gs =10v,i d =80a v gs =10v,i d =45a v gs =10v,i d =20a v gs =8v,i d =80a v gs =5v,i d =40a v gs =10v,i d =80 a;t j =175 c v gs =8v,i d =80 a; t j =175 c v gs =5v,i d =40 a; t j =175 c 1.35 1.6 1.56 1.7 3.5 2.5 2.5 2.5 3.5 6 5.7 7 11. 4 m ? m ? m ? m ? m ? m ? m ? m ? i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 160 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 80a 210 s r g gate resistance v ds =0v,f=1mhz,v gs =0 0.5 ? c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =15v,f=1mhz,v gs =0 4800 3000 680 pf pf pf c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =0v,f=1mhz,v gs =0 7000 12300 4200 pf pf pf l s internal source inductance from the lead end (6mm from package body) to the die center 4nh l d internal drain inductance not available on surface mounting package obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
3/8 stv160nf02l electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =10v,i d =80a r g =4.7 ? v gs =10v (see test circuit, figure 3) 28 ns t r rise time 800 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =16v,i d =160a, v gs =10v 115 15 45 160 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =10v,i d =80a, r g =4.7 ?, v gs =10v (see test circuit, figure 5) 80 240 ns ns t d(off) t r(voff) t f t c turn-off delay time off-voltage rise time fall time cross-over time vclamp = 16 v, i d =40a r g =4.7 ?, v gs = 10v 80 40 140 200 ns ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 160 a i sdm (1) source-drain current (pulsed) 640 a v sd (2) forwardonvoltage i sd =160a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =80a,di/dt=100a/s, v dd =15v,t j =25 c (see test circuit, figure 5) 90 225 5 ns nc a safe operating area thermal impedance obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
stv160nf02l 4/8 gate charge vs gate-source voltage capacitance variations output characteristics tranconductance tranfer characteristics static drain-source on resistance obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
5/8 stv160nf02l basic schematic for motherboard vrm whith synchronous rectification basic schematic mosfets switch used in secondary side of a froward convert source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp. obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
stv160nf02l 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
7/8 stv160nf02l dim. mm inch min. typ. max. min. typ. max. a 3.35 3.65 0.132 0.144 a1 0.00 0.10 0.000 0.004 b 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 d 9.40 9.60 0.370 0.378 d1 7.40 7.60 0.291 0.300 e 1.27 0.050 e 9.30 9.50 0.366 0.374 e1 7.20 7.40 0.283 0.291 e2 7.20 7.60 0.283 0.300 e3 6.10 6.35 0.240 0.250 e4 5.90 6.10 0.232 0.240 f 1.25 1.35 0.049 0.053 h 0.50 0.002 h 13.80 14.40 0.543 0.567 l 1.20 1.80 0.047 0.071 q 1.70 0.067 0 o 8 o detail "a" plane seating l a1 f a1 h a d d1 = = = = = = e4 0.10 a e1 e3 c q a = = b b detail "a" seating plane = = = = e2 6 10 5 1 e b he m 0.25 = = = = 0068039-c powerso-10 mechanical data obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
stv160nf02l 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
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